1994. 5. 11
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTA1274
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to KTC3227.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-400
mA
Emitter Current
I
E
400
mA
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70~140, Y:120~240.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-100
nA
Emitter-Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-5mA, I
B
=0
-80
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-50mA
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-200mA
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-20mA
-
-
-0.4
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-5mA
-0.55
-
-0.8
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
14
-
pF
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